(Hong Kong)
Product Summary
The BCR562 is a PNP silicon digital transistor.
Parametrics
BCR562 absolute maximum ratings: (1)Collector-emitter voltage, VCEO: 50 V; (2)Collector-base voltage, VCBO: 50V; (3)Emitter-base voltage, VEBO: 10V; (4)Input on Voltage, Vi(on): 30V; (5)DC collector current, IC: 500 mA; (6)Total power dissipation, TS = 79℃, Ptot: 330 mW; (7)Junction temperature, Tj: 150℃; (8)Storage temperature, Tstg: -65 to 150℃.
Features
BCR562 features: (1)Switching circuit, inverter, interface circuit, driver circuit; (2)Built in bias resistor (R1=4.7kΩ, R2=4.7kΩ).
Diagrams
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 BCR562 |
Other |
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Data Sheet |
Negotiable |
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