Product Summary

The BC847S E6327 is an NPN general-purpose transistor.

Parametrics

BC847S E6327 absolute maximum ratings: (1)Collector-emitter voltage VCEO: 45 V; (2)Collector-base voltage VCBO: 50V; (3)Collector-emitter voltage VCES: 50V; (4)Emitter-base voltage VEBO: 6V; (5)DC collector current IC: 100 mA; (6)Peak collector current ICM: 200mA; (7)Total power dissipation, TS = 115 ℃ Ptot: 250 mW; (8)Junction temperature Tj: 150 ℃; (9)Storage temperature Tstg: -65 to 150℃.

Features

BC847S E6327 features: (1)For AF input stages and driver applications; (2)High current gain; (3)Low collector-emitter saturation voltage; (4)Two ( galvanic) internal isolated Transistors with good matching in one package.

Diagrams

BC847S E6327 block diagram

BC8450
BC8450
Other

Data Sheet
Negotiable 
BC846
BC846
Rectron
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Data Sheet
0-3000: $0.04
3000-6000: $0.03
6000-12000: $0.03
BC846 T/R
BC846 T/R
NXP Semiconductors
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Data Sheet
Negotiable 
BC846,215
BC846,215
NXP Semiconductors
Transistors Bipolar (BJT) TRANS GP TAPE-7
Data Sheet
0-1: $0.03
1-25: $0.01
25-100: $0.01
100-500: $0.01
500-3000: $0.01
BC846A
BC846A
Taiwan Semiconductor
Transistors Bipolar (BJT) Transistor 200mW
Data Sheet
0-3000: $0.02
3000-6000: $0.01
BC846A /T3
BC846A /T3
NXP Semiconductors
Transistors Bipolar (BJT) TRANS GP TAPE-13
Data Sheet
Negotiable